Now showing items 21-30 of 3718
Physical properties characterization ofW03 films grown by hot-filatnent metal oxide deposition
W03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains thatW03 presents mainly monoclinic crystalline phase. The chemical ...
Optical and structural properties of W03 as a function of the annealing temperature
This work presents a study of effect of annealing temperatme on optical and structural properties of W03 that has been deposited by hot-filament metal oxide deposition (HFMOD). X-ray diffraction shows that the ...
Información General: Grupo de Física Aplicada
(SABER ULA, 2006)
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin ﬁlms by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Preparation and structural characterization of hybrid composites of semiconductor oxides with amorphous carbon
Organic/inorganic hybrids composites type have been reported as an alternative for the preparation of multifunctional materials with superior properties to those of individual constituents. In this work, hybrid composites ...
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
(AMER INST PHYSICS, 2010)
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...
Ohmic contacts with palladium diffusion barrier on III-V semiconductors
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
COEXISTENCE OF CONDUCTING AND NONCONDUCTING PHASES ON THE METALLIC SIDE OF THE MOTT TRANSITION IN PHOTOINJECTED SEMICONDUCTORS
(Pergamon-elsevier Science LtdOxfordInglaterra, 1992)