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Spin-relaxation time in the impurity band of wurtzite semiconductors
(American Physical Society, 2017-09-18)
The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin ...
Magnetic field effects on donor transitions in quantum wells
(Pergamon-elsevier Science LtdOxfordInglaterra, 1996)
Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
(American Physical Society, 2007-12)
We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor ...
Substitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: Experimental and theoretical studies
(IOP Publishing, 2017-07)
The Pechini sol-gel method has been employed for the synthesis of pure and (181Hf→)181Ta-doped Y2O3 nanopowders. We performed a structural characterization from the micro to the subnanoscopic scale by means of scanning ...
Finite-difference calculation of donor energy levels in a spherical quantum dot subject to a magnetic field
(Elsevier B.V., 2015-02-01)
The ground and excited states of a donor impurity at the center of a spherical quantum dot subject to a magnetic field are calculated within the effective-mass approximation. The barriers are infinitely high and the ...
Internal stress-induced changes of impurity coordination and doping mechanisms in a-Ge : H doped with column III metals
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)