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Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering
(ELSEVIER SCI LTD, 2009)
In this study, oxide and nitride films were deposited at room temperature through the reaction of silicon Sputtered by argon and oxygen ions or argon and nitrogen ions at 250 and 350 W with 0.67 Pa pressure. It was observed ...
Purification of metallurgical silicon by horizontal zone melting
(Elsevier Science BvAmsterdamHolanda, 2012)
Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation-Porous Silicon (HI-PS) Micromachining Technique
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2008)
This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique-a combination of hydrogen ion ...
OPTICAL PROPERTIES OF ZINC SULPHIDE- POROUS SILICON NANOCOMPOSITES
(2012-12-18)
OPTICAL PROPERTIES OF ZINC SULPHIDE- POROUS SILICON NANOCOMPOSITES
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates
(glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 ◦C for up to
14 h. The annealed ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon ( a-Si:H) films which were deposited on two different sub
strates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250"( for up to
14 h.The ...
Inclusões de silicone (dimetilpolisiloxane): estudo experimental e clínico
(Universidade Federal de São Paulo (UNIFESP), 1966)
Photoacoustic thermal characterization of spark‐processed porous silicon
(Journal of Applied Physics, 2013-01-16)
Photothermal chacaterization of electrochemical etching porous silicon
(Physical Review Letters, 2013-01-16)