Now showing items 1-10 of 1741
Anomalous lattice parameter of magnetic semiconductor alloys
(AMER INST PHYSICS, 2009)
The addition of transition metals to III-V semiconductors radically changes their electronic, magnetic, and structural properties. We show by ab initio calculations that in contrast to the conventional semiconductor alloys, ...
Laser dressing effects in low-dimensional semiconductor systems
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin ﬁlms by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
(AMER INST PHYSICS, 2010)
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
COEXISTENCE OF CONDUCTING AND NONCONDUCTING PHASES ON THE METALLIC SIDE OF THE MOTT TRANSITION IN PHOTOINJECTED SEMICONDUCTORS
(Pergamon-elsevier Science LtdOxfordInglaterra, 1992)
Hall effect: the role of nonequilibrium charge carriersHall effect: the role of nonequilibrium charge carriers
(Revista Mexicana de Física, 2011)