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Back gate bias influence on SOI Omega-gate nanowire down to 10 nm width
(Ieee, 2016-01-01)
We investigate for the first time the influence of the back gate bias (V-B) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, ...
Back gate bias influence on SOI Ω-gate nanowire down to 10 nm width
(2017-01-03)
We investigate for the first time the influence of the back gate bias (VB) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, it ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(Ieee, 2016-01-01)
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic
(Ieee, 2017-01-01)
This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 mu m width and three different channel lengths were exposed to a 600 keV proton radiation ...
Fracasso e Liberdade em Sartre: o desejo humano de ser Deus
(Universidade Federal de São CarlosUFSCarPrograma de Pós-graduação em Filosofia e Metodologia das CiênciasCâmpus São Carlos, 2018-02-27)
L'essai d'ontologie phénoménologique L’être et le néant (1943) de Sartre nous présente une conception de la réalité humaine comme fondamentalement un désir d'être Dieu. Nous avons l’intention, avec le présent travail, ...
CARACTERIZACIÓN DEL SOI USANDO ANFIS CON RESIDUALES HETEROCEDÁSTICOS
(Universidad de Tarapacá., 2007)
La parole de soi dans le discours religieux
(Religion et développement humain. Questions psychologiques. Hommage à Jean-Marie Jaspard (pp. 71-89). Paris: L’Harmattan, 2001)
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC ...
Threshold voltages of SOI MuGFETs
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled ...