We present ab initio calculations of magnetoelectronic and transport properties of the interface of hcp Cobalt (001) and the intrinsic narrow-gap semiconductor germanium selenide (GeSe). Using a norm-conserving pseudopotentials ...

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 ...

We describe the spin-dependent quantum conductance in a wire where a magnetic eld is spatially modulated. The change in direction and intensity of the magnetic eld acts as aperturbation that mixes spin projections. This ...

In this work, we investigate theoretically the spin-resolved local density of states (SR-LDOS) of a ferromagnetic (FM) island hybridized with an adatom, which is described by the Single Impurity Anderson Model (SIAM). Our ...

Titanium dioxide (TiO2) and Fe-doped titanium dioxide (Ti1-xFexO2) thin films were grown on silicon substrates using the magnetron sputtering Rf (13.56 MHz) technique. The relevant growth parameters for the samples (pressure, ...

Calcium (Ca)-doped bismuth ferrite (BiFeO3) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), ...

The micromagnetic domain structure of MnAs films gave place to an intense research activity in the last few years due to its potential application in magneto-electronic devices such as domain-wall track memories and logic ...