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Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)
Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
(Sociedade Brasileira de Física, 2002)
It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. ...
Laser dressing effects in low-dimensional semiconductor systems
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)
Spin-relaxation time in the impurity band of wurtzite semiconductors
(American Physical Society, 2017-09-18)
The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin ...
Magnetic field effects on donor transitions in quantum wells
(Pergamon-elsevier Science LtdOxfordInglaterra, 1996)
Substitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: Experimental and theoretical studies
(IOP Publishing, 2017-07)
The Pechini sol-gel method has been employed for the synthesis of pure and (181Hf→)181Ta-doped Y2O3 nanopowders. We performed a structural characterization from the micro to the subnanoscopic scale by means of scanning ...
Finite-difference calculation of donor energy levels in a spherical quantum dot subject to a magnetic field
(Elsevier B.V., 2015-02-01)
The ground and excited states of a donor impurity at the center of a spherical quantum dot subject to a magnetic field are calculated within the effective-mass approximation. The barriers are infinitely high and the ...
Internal stress-induced changes of impurity coordination and doping mechanisms in a-Ge : H doped with column III metals
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)
Magnetic-field effects on shallow impurities in semiconductor GaAs-(Ga,Al)As quantum wells and superlattices within a fractional-dimensional space approach
(Elsevier Science BvAmsterdamHolanda, 2000)
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...